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STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 1 of 35 STAR-250 250k pixel radiation hard cmos image sensor datasheet
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 2 of 35 table of contents 1 image sensor description....................................................................................................... .......3 1.1 f eatures ............................................................................................................................... .................3 1.2 e lectrical symbol ..............................................................................................................................4 1.3 p in configuration ............................................................................................................................... .5 1.4 i mage sensor architecture ...............................................................................................................6 1.5 i ntegrating imager operation principles .......................................................................................8 1.5.1 image definitions.............................................................................................................. ..................8 1.6 o peration ............................................................................................................................... .............10 1.6.1 integrating imager operation ................................................................................................... .......10 1.6.2 variable integration time (electronic shuttering) ......... ..................................................................12 image readout procedure ........................................................................................................ .......................12 1.7 t iming and control sequences .......................................................................................................13 1.7.1 basic timing................................................................................................................... ...................13 1.7.2 how to load the x- and y- start posi tions ...................................................................................... .16 1.7.3 other signals:................................................................................................................. ..................17 2 absolute maximum ratings ....................................................................................................... .17 3 specifications ................................................................................................................. .....................18 3.1 dc operating conditions .................................................................................................................18 3.2 r esistor biases : power vs . speed ....................................................................................................18 3.3 ac operating conditions .................................................................................................................18 3.4 e lectro - optical characteristics ..................................................................................................19 3.4.1 overview ....................................................................................................................... ...................19 3.4.2 spectral response .............................................................................................................. ...............21 3.4.3 pixel profile.................................................................................................................. ....................23 4 environmental characteristics ...........................................................................................24 4.1 t emperature ............................................................................................................................... ........24 4.2 r adiation tolerance ........................................................................................................................24 5 pin configuration .............................................................................................................. ...............26 6 mechanical data ................................................................................................................ ...............32 6.1 p ackage drawing ............................................................................................................................... 32 6.2 d ie alignment ............................................................................................................................... ......33 6.3 w indow specifications .....................................................................................................................34 7 ordering information ........................................................................................................... ........34
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 3 of 35 purpose this document is the data sheet of a radiation-hard cmos active pixel. the specifications are based upon the results of the electro-optical measurements. 1 image sensor description the STAR-250/cyis1sm0250aa sensor is a cmos active pixel sensor that is designed for application in optical inter-satellite link beam trackers. apart from this, the design also envisaged a broader range of a pplications in space-borne systems like sun sensing and star tracking. the sensor has an outstanding radiation tolerance that has been obtained by using proprietary technology modifications and design techniques. 1.1 features the STAR-250 sensor has the following characteristics: ? integrating 3-transistor active pixel sensor ? 0.5 m cmos technology ? 512 by 512 pixels on 25 m pitch ? 4 diodes per pixel for improved mtf and prnu ? radiation tolerant design ? on-chip double sampling circuit to cancel fixed pattern noise ? electronic shutter ? readout rate: up to 30 full frames per second ? roi windowing through pre-settable start point of read-out ? on-chip 10-bit adc ? ceramic jlcc-84 package part numbers color or b/w STAR-250 cyiism0250aa-hfc ? (preliminary) b&w
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 4 of 35 1.2 electrical symbol
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 5 of 35 1.3 pin configuration table 1: STAR-250 sensor pin configuration pin name pin name pin name pin name 1 s 22 sync_yl 43 out 64 d9 2 r 23 eos_yl 44 in_adc 65 gnd_adc_ana 3 reset 24 clk_x 45 nbiasana2 66 vdd_adc_ana 4 select 25 sync_x 46 nbiasana 67 vdd_adc_dig 5 l/r 26 eos_x 47 vlow_adc 68 gnd_adc_dig 6 a0 27 clk_yr 48 g_ab 69 vdd_adc_dig_3.3/ 5 7 a1 28 sync_yr 49 vdd_resr 70 vhigh_adc 8 a2 29 eos_yr 50 vdd_dig 71 clk_adc 9 gnd_ana 30 gnd_amp 51 gnd_dig 72 pbiasdig2 10 vdd_ana 31 vdd_amp 52 vdd_pix 73 pbiasencload 11 vdd_dig 32 gnd_dig 53 vdd_adc_an a 74 pbiasdig1 12 gnd_dig 33 vdd_dig 54 gnd_adc_an a 75 bitinvert 13 a3 34 vdd_ana 55 d0 76 vdd_pix 14 a4 35 gnd_ana 56 d1 77 gnd_dig 15 a5 36 cal 57 d2 78 vdd_dig 16 a6 37 g0 58 d3 79 vdd_resl 17 a7 38 g1 59 d4 80 tri_adc 18 a8 39 nbiasarr 60 d5 81 testdiode 19 ld_y 40 pbias 61 d6 82 testpixelarray 20 ld_x 41 nbias_amp 62 d7 83 testpixel_reset 21 clk_yl 42 blackref 63 d8 84 testpixel_out
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 6 of 35 1.4 image sensor architecture the base line of the STAR-250 sensor design consists of an imager with a 512 by 512 array of active pixels at 25 m pitch. the detector contains on-chip correction for fixed pattern noise (fpn) in the column amplifiers, a programmable gain output amplifier and a 10-bit analog to digital converter (adc). through additional preset registers the start position of a window can be programmed to en able fast read out of only part of the detector array. pixel array 512 by 512 pixels y address decoder / shift register 9 a8 ? a0 column amplifiers s r 512 512 512 x address decoder / shift register 9 1024 x-start register programmable gain amplifier blackre f ca l g0 g1 aout 10-bit adc 10 d9 ? d0 clk_adc ain 512 sel rst col ld_y ld_x 1024 rst sig 9 9 clk x clk_y l clk_yr y address decoder / shift register syncyr y-start register-decoder sync_y l sync_ x fig. STAR-250 schematic electrical signal path the image sensor consists of several building blocks as outlined in figure 1. the central element is a 512 by 512 pixel array with square pixels at 25 m pitch. unlike in classical designs the pixels of this sensor contain four photodiodes. this configuration
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 7 of 35 enhances the mtf and reduces the prnu. figure 2 shows an electrical diagram of the pixel structure. the four photodiodes are connected in parallel to the reset transistor (t1). transistor t2 converts the charge, collected on the photo diode node to a voltage signal that can be connected to the column bus by t3. the ?reset?- and the ?read?- entrance of the pixel are connected to one of the y shift registers each. reset read column bus t1 t2 t3 fig. pixel schematic these shift registers are located next to the pixel array and contain as many outputs as there are rows in the pixel array. they are designed as?1-hot? registers (yl and yr shift register) each allowing selection of one row of pixels at a time. a clock pulse moves the pointer one position down the register resulting in the subsequent selection of every individual row for either reset or for read-out. the spatial offset between the two selected rows determines the integration time. a synchronisation pulse to the shift registers loads the value from a preset register into the shift register forcing the pointer to a pre-determined position. windowing in the vertical (y-) direction is achieved by presetting the registers to a row that is not the first row and by clocking out only the required number of rows. all pixel outputs are connected to a column bus and each column bus feeds the pixel signal to a column amplifier. using a double sampling technique these amplifiers can subtract the remaining pixel offset from the signal. to serialise the output signal from the column amplifiers an identical shift/preset technique is used as for the vertical (y-) direction. windowing is thus also possible in the x-direction. the signal from the column amplifiers is then fed to an output amplifier with four pre- settable gains. the offset correction of this amplifier is done through a black-reference procedure. the signal from the output amplifier is externally available on the analogue output terminator of the device.
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 8 of 35 the on-chip 10-bit adc is electrically separated from the other circuits of the device and can be used if required. alternatively an external adc can be used and the internal adc can be powered down. functional specification 1.5 integrating imager operation principles the STAR-250 is a line-scan based integrating imager with provisions for versatile readout (windowing, electronic shuttering...). this combination results in certain timing relations and dependencies that are relevant to the end-user. these relations are defined and explained in the following paragraphs. 1.5.1 image definitions the following definitions concern the STAR-250 image plane dimensions, and the format of the resulting pictures. image coordinates are defined with respect to an absolute origin1 (0,0). figure 3a shows the coordinate system projected on the image, as it can be seen on a computer display or a printout. figure 3b shows the coordinate system on the physical die. this origin is at the top-left corner of the image, corresponding to the top-right corner on the actual STAR-250 chip. the imager x- axis runs horizontally towards the right from the origin; the y-axis runs vertically and downwards from the origin. in the resulting image reference frame, windows are scanned line by line, from top to bottom. lines are scanned pixel by pixel, from the left to the right. figure 2b: coordinate system on the p h y sical die. figure 1a: coordinate system on the ima g e. pixel pin 1 y x pixel 0,0 x1,y1 window x2,y2
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 9 of 35 table 2: terms and definitions term definition value matrix full-size picture, 512 x 512 pixels window region-of-interest, portion of a matrix under readout, a rectangular area of less than 512 x 512 pixels, at a user-defined position in the matrix plane frame synonym to window, including the special case of a matrix h frame effective frame height (y2-y1+1) w frame effective frame width (x2-x1+1) h matrix matrix height 512 lines w matrix matrix width 512 pixels x1 top-left x coordinate of a frame y1 top-left y coordinate of a frame x2 bottom-right x coordinate of a frame y2 bottom-right y coordinate of a frame x rd x coordinate of pixel currently under readout y rd y coordinate of line currently under readout (yl) y rst y coordinate of line currently under reset (yr) delay lines number of lines equivalent to the integration time sync_yl-sync_yr
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 10 of 35 1.6 operation 1.6.1 integrating imager operation in a line-scan integrating imager with elec tronic shutter, two continuous processes take care of image gathering. the first process resets lines in a progressive scan. at line reset, all of the pixels in a line are drained from any photocharges collected since their last reset or readout. after reset, a new exposur e cycle starts for that particular line. &yread &yreset line scan pixel double sampling col. line readout: ? t = ti ? s = offsets + final signal line reset: ? t = 0 ? s = offsets charge accumulation ? 0 < t < ti ds line readout: ? t = ti ? s = final signal a dc pixel scan figure 4: pixel signal sampling
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 11 of 35 the second process is the actual readout, which also happens ins an equally fast line- wise progressive scan. during readout, photo charges collected since the previous reset, are converted into an output voltage, which is then passed on - pixel by pixel - to the imager?s pixel-serial output and adc. readout is destructive, i.e. the accumulation of charges from successive exposure phases is not possible in the present architecture. three internal address pointers control the processes of line and pixel readout and line reset. these pointers indicate the current line under readout (y rd ), the current line under reset (y rst ), and the current pixel under readout (x rd ), also see figure 4. the progress rate of line resets is equal to the progress rate of line readouts. physically the yread and yrst register are located at left and right sides of the imager, and therefore named yl (the readout register) and yr (the reset register). the control of the row signals can be given to each of them, by the pin named l/r. the actual line readout process starts with addressing the line to read. this can be done either by initialising the y rd pointer with a new value, or by shifting it one position beyond its previous value. (addressing the line to be reset, yrst is done in an analogous fashion). during the ?blanking time?, after the new line is addressed on the sensor, the built-in column-parallel double sampling amplifiers are operated, which renders offset- corrected values of the line under readout. after the blanking time, the pixels of the row addressed by yl, are read by multiplexing all of the pixels one by one to the serial output chain. the pixel is selected by the x rd pointer, and that pointer can either be initialised with a new value, or be an increment of the previous position. the analog chain has further a track&hold stage, output buffer, followed by an (electrically separate) adc. the time between row resets and their corresponding row readouts is the effective exposure time (or integration time). this time is proportional to the number of lines, ( delaylines ) between the line currently under reset and the line currently under readout: delaylines = (y rst - y rd +1). this time is thus also equal to the delay between the sync_yr pulse and the subsequent sync_yr. the effective integration time t int is thus calculated as ( delaylines * line time ). the line time itself is a function of four terms: the time to output the desired number of pixels in the line (w frame ), and the overhead (?blanking?) time that is needed to select an new line and perform the double sampling and reset operations.
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 12 of 35 1.6.2 variable integration time (electronic shuttering) figure 5 illustrates the variable integration time, for the case of t int equal to the frame read time t rd,frame , the case of under-exposure, and the case of over-exposure. t stare,frame t i t rd,frame = t i t stare,frame t i t rd,frame t stare,frame t i t rd,frame y1 y2 y1 y2 y1 y2 y1 y2 y1 y2 y1 y2 reset lines read lines reset lines read lines reset lines read lines time time time figure 5: variable integration time: nominal expo sure, under-exposure and over-exposure. a new reset or reset cycle (not shown) may start whitel the previous read is still going on. note that a read cycle also resets, thus in principle a reset cycle is only needed in underexposure. image readout procedure the procedure to read out a windowed inmage , characterized with the coordinates (x1, y1) and (x2, y2), and with an integration time equivalent to delaylines lines, is:
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 13 of 35 a pre-amble or initialisation phase is not considered relevant. the sensor is read out continuously. the first frame ? as there was no preceding reset of each pixel ? is generally saturated and useless. image readout in an infinite uninterrupted loop, do, line-by-line: synchronise the read (yl) and/or reset (y r) registers, in this cases: -sync_yl to re-initiate the readout sequence to row position y1 -sync_yr to re-initiate the reset pointer to row position y1 for all other lines do not pulse one of these sync_y*. operate the double sampling column amplifiers, with two resets. apply one to reset the line that is currently selected to produce the reset reference level for the double sampling column amplifiers. apply the other reset to another line, depending on the required integration time reduction. perform a line-readout: reset the x read address shift register to the value in its shadow register (x1). for (x2-x1+1) pixels do: perform a pixel readout operation, operating the track/hold and the adc shift the x read address shift register one position further. shift the y read and reset address shift register s one position further; note: if either of y read or reset address shift register comes at a position equivalent to y2, wrap it around to position y1 by pulsing sync_yl. 1.7 timing and control sequences the following paragraphs describe the timing of the digital control signals to be applied to the sensor. the given information is based upon simulations and must be confirmed by practical experiments after fabrication of test samples. 1.7.1 basic timing figure 6 and figure 7 show the basic timing diagram of the STAR-250 image sensor and table 4 shows the timing specifications of the clocking scheme.
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 14 of 35 clk_yl clk_y r s r cal sync_y l sync_y r l/ r once per frame t1 t2 t3 t4 t4 t5 t7 t6 t8 t9 t10 t11 t12 t13 t14 row y-1 time available for read out of row y row blanking time ld _ y row star t address t15 t17 t16 reset may occur at any moment, presumably once per sequence of frames. figure 6: frame read-out timing sequence note: sync_yr is not identical to as sync_yl. sync_yr is used in case of electronic shutter. the clk_yr is driven identically as clk_yl, but the sync_yr pulse leads the sync_yl pulse by a certain number of rows. this lead-time is the effective integration (electronic shutter ~) time. relative to the row timing, both sync pulses are given at the same time position, once per frame, but during different rows. sync_yl is pulsed when the first row will be read out and sync_yr is pulsed for the electronic shutter to start for this first ro w. cal is pulsed on the first row too, 2 s later than sync_yl. the minimal idle time is 1.4 s (before starting reading pixels). however, it is advised not to read out pixels during the complete row initialisation process (in between the rising edge on s and the falling edge on l/r). in this case, the total idle time is minimally .
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 15 of 35 this timing assumes that the y start register has been loaded in advance, which can occur at any time but before the pulse on sync_yl or sync_yr. table 3: timing specifications sym bol min typ description t1 1.8 s delay between selection of new row by falling edge on clk_yl and falling edge on s. minimal value. normally, clk_yr should be low already at the end of the previous sequence. t2 1.8 s delay between selection of new a row by sync_yl and falling edge on s. t3 0.4 s duration of s and r pulse. t4 0.1 s duration of reset pulse. t5 t4 + 40 ns 0.3 s l/r pulse must overlap second reset pulse at both sides. t6 0.8 s delay between falling edge on reset and falling edge on r. t7 20 ns 0.1 s delay between falling edge on s and rising edge on reset. t8 0 1 s delay between falling edge on l/r and falling edge on clk_y. t9 100 ns 1 s duration of cal pulse. the cal pulse is given once each frame. t10 0 2 s delay between falling edge of sync_yl and rising edge of cal pulse. t11 40 ns 0.1 s delay between falling edge on r and rising edge on l/r. t12 0.1 s 1 s delay between rising edge of clk_y and falling edge on s. t13 0.5 s pulse width sync_yl / yr t14 0.5 s pulse width clk_yl / yr t15 10 ns address set-up time t16 20 ns load x / y start register value t17 10 ns address stable after load t18 10 ns t19 20 ns sync_x pulse width. sync_x while clk_x is high. t20 10 ns t21 40 ns analogue output is stable during clk_x low. t22 40 ns clk_x pulse width: during this clock phase the analogue output ramps to the next pixel level. t23 125 ns adc digital output stable after falling edge of clk_adc
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 16 of 35 1.7.2 how to load the x- and y- start positions the start positions (start addresses) for ?roi ? (region of interest) are pre-loaded in the x or y start register. they become effective by the application of the sync_x, sync_yl and/or sync_yr. the start x- or y address must be applied to their common address bus, and the corresponding ld_x or ld_y pin must be pulsed. ld x column start address may occur at any moment in time sync x c lk x analog output clk adc pixel 1 pixel 2 pixel 3 pixel 1 pixel 2 adc ou t t15 t17 t16 t18 t20 t19 t21 t22 time available for read out of row y row blanking time t23 figure 7: column read-out timing sequence on each falling edge of clk_x, a new pixel of the same row (line) is accessed. the output stage is in hold when clk_x is low and starts generating a new output after a rising edge on clk_x. the following timing constraints apply: the x or y start addresses can be uploaded well in advance, before the x or y shift registers are preset by a sync pulse. however, if necessary, they can be loaded just before the sync_x or sync_y pulse as shown in the figure. e.g. the x start register can be loaded during the row idle time. the y start register can be loaded during readout of the last row of the previous frame. if the x or y start address does not change for subsequent frames, it does not need to be reloaded in the register.
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 17 of 35 1.7.3 other signals: the select signal must be tied to vdd for normal operation. this signal was added for diagnostic reasons and inhibits the pi xel array operation when held low. the cal signal sets the output amplifier dc offset level. when this signal is active (high) the pixel array is internally disconnected from the output amplifier, its gain is set to unity and its input signal is connected to the black_ref input. this action must be performed at least once per frame. (on may even choose to do it once per line ? but not advised) eos_x, eos_yl and eos_yr produce a pulse when the respective shift register comes at its end. these outputs are used mainly during testing to verify proper operation of the shift registers. test diode and testpixel array are connections to optical test structures that are used for electro-optical evaluation. test-diode is a plain photodiode with an area of 14x5 pixels. testpixel_array is an array (14x5) of pixels where the photodiodes are connected in parallel. these structures are used to measure the photocurrent of the diodes directly. testpixel_reset and testpixel-out are connections to a single pixel that can be used for test purposes. 2 absolute maximum ratings table 4: absolute maximum ratings parameter value units any supply voltage -0.5 to +7 v voltage on any input pin -0.5 to vdd+0.5 v operating temperature 0 to 65 deg c storage temperature -40 to 100 deg c
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 18 of 35 3 specifications 3.1 dc operating conditions table 5: dc operating conditions symbol parameter min typ max units vdd_ana analogue supply voltage to imager part 5 v vdd_dig digital supply voltage to image opart 5 v vdd_adc_ana analogue supply voltage to adc 5 v vdd_adc_dig digital supply voltage to adc 5 v vdd_adc_dig_3.3/5 supply voltage of adc output stage 3.3 to 5 v vih logical ?1? input voltage 2.3 vdd v vil logical ?0? input voltage 0 1 v voh logical ?1? output voltage 4.25 4.5 v vol logical ?0? output voltage 0.1 1 v 3.2 resistor biases: power vs. speed 3.3 ac operating conditions table 6: ac operating conditions parameter min typ max units pixel output rate 5 8 mhz frame rate 18 29 full frames /s
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 19 of 35 3.4 electro-optical characteristics 3.4.1 overview table 7: electro-optical specifications parameter specification (all typical) comment detector technology cmos active pixel sensor pixel structure 3-transistor active pixel 4 diodes per pixel radiation-tolerant pixel design 4 photodiodes for improved mtf photodiode high fill factor photodiode sensitive area format 512 by 512 pixels pixel size 25 x 25 m 2 spectral range 200 ? 1000 nm see curves quantum efficiency x fill factor max. 35% above 20% between 450 and 750 nm. (note: metal fillfactor (mff) is 63%) full well capacity 311k electrons when output amplifier gain = 1 linear range within + 1% 128k electrons when output amplifier gain = 1 output signal swing 1.68 v when output amplifier gain = 1 conversion gain 5.7 v/e- when output amplifier gain = 1 near dark temporal noise 76 e- dominated by ktc dynamic range 74 db (5000:1) at the analog output fpn (fixed pattern noise) 1 < 0.1% of full well (typical) measured local, on central image area 50% of pixels, in the dark prnu (photo response non- uniformity) local: 1 = 0.39% of response global: 1 = 1.3% of response measured in central image area 50% of pixels, at qsat/2 average dark current signal 4750 e-/ s at rt dsnu (dark signal non uniformity) ? e-/s rms (tbc) at rt, scale linearly with integration time. mtf horizontal: 0.36 vertical: 0.39 at 600 nm.
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 20 of 35 optical cross talk 5% (tbc) to nearest neighbour if central pixel is homogeneously illuminated 100% 5% 5% 5% 5% anti-blooming capacity x 1000 to x 100 000 output amplifier gain 1, 2, 4 or 8 controlled by 2 bits windowing x and y 9-bit programmable shift registers indicate upper left pixel of each window electronic shutter range 1 : 512 integration time is variable in time steps equal to the row readout time adc 10 bit adc linearity 3.5 counts inl missing codes none adc setup time 310 ns to reach 99% of final value adc delay time 125 ns power dissipation < 350 mw average at 8 mhz pixel rate
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 21 of 35 3.4.2 spectral response figure 5 shows a typical spectral response curve. the fringes in the curve result from optical interference in the top dielectric layers. 0 0.05 0.1 0.15 0.2 400 500 600 700 800 900 1000 1100 wavelength [nm] spectral respnse [a/w] qe 0.01 qe 0.01 qe 0.01 qe 0.05 qe 0.1 qe 0.2 qe 0.3 qe 0.4 figure 5: typical spectral response curve lines of equal qe*ff are indicated.
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 22 of 35 star250 uv - m e as u r e m e n t 1.00e-04 1.00e-03 1.00e-02 1.00e-01 1.00e+00 200 250 300 350 400 450 500 wavelength [nm] ff * spectral response [a/w] qe 100% qe 10% qe 1%
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 23 of 35 3.4.3 pixel profile the pixel profile was measured using the ?knife-edge? method: the image of a target containing a black-to white transition is scanned over a certain pixel with sub-pixel resolution steps. the image sensors settings and the illumination conditions are adjusted such that are the transitions covers 50 % of the output range. the scan is performed both in horizontal and in vertical direction. 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 sc an dista nce [mm] relative profile horizontal pixel profile vertica pixel pr ofile ima g inar y pixel boundaries figure 3: typical pixel profiles
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 24 of 35 4 environmental characteristics 4.1 temperature table 8: temperature specifications parameter value units operating temperature 0 to 65 deg c storage temperature -10 to 65 (@ 15% rh) deg c storage temperature -10 to 38 (@ 85% rh) deg c rh = relative humidity 4.2 radiation tolerance table 9: radiation specifications parameter criterion qualification level increase in average dark current < 1 na/cm 2 after 3 mrad see graph image operation with dark signal < 1v/s 10 mrad demonstrated (co60) gamma total dose radiation tolerance single (test) pixel operation with dark signal < 1v/s 24 mrad demonstrated (co60) proton radiation tolerance 1% of pixels has an increase in dark current > 1 na/cm 2 after 3*10^10 protons at 11.7 mev see graph sel threshold > 80 mev cm 3 mg -1 to be confirmed next figure shows the increase in dark current under total dose irradiation. this curve was measured during high dose rate radiati on. annealing results in a significant decrease of dark current.
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 25 of 35 0 0,2 0,4 0,6 0,8 1 1,2 1,4 024681012 total ionizing dose [mrad(si)] dark current increase [na/cm 2 ] figure 4: increase in dark current vs. total dose radiation next figure shows the percentage of pixels with a dark current increase under 11.7 mev radiation with protons. figure 5: increase in dark current under proton irradiation (measurements / simulation model)
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 26 of 35 5 pin configuration table 10: power supply connections 10 vdd_ana analog power supply: 5 v 11 vdd_dig digital power supply 5v 31 vdd_amp power supply of output amplifier: 5 v 33 vdd_dig digital power supply 5v 34 vdd_ana analogue power supply: 5 v 49 vdd_resr reset power supply 5v 50 vdd_dig digital power supply 5v 53 vdd_adc_an a adc analogue power supply 5v 66 vdd_adc_an a adc analogue power supply: 5 v 67 vdd_adc_dig adc digital power supply 5v 69 vdd_adc_dig _3.3/5 adc 3.3v power supply for digital output of adc. for interface with 5v external system: connect to vdd_adc_dig. for interface with 3.3 v external system: connect to 3.3v power supply. 52 76 vdd_pix pixel array power supply [default: 5v, the device is then in ?soft reset?. in order to avoid the image lag associated with soft reset, reduce this voltage to 3?3.5 v ?hard reset?] 78 vdd_dig digital power supply 5v 79 vdd_resl reset power supply 5v table 11: ground connections 9 gnd_ana analog ground 12 gnd_dig digital ground
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 27 of 35 30 gnd_amp ground of output amplifier 32 gnd_dig digital ground 35 gnd_ana analog ground 51 gnd_dig digital ground 54 gnd_adc_an a adc analog ground 65 gnd_adc_an a adc analog ground 68 gnd_adc_dig adc digital ground 77 gnd_dig digital ground table 12: digital input signals 1 s control signal for column amplifier apply pulse pattern ? see sensor timing diagram 2 r control signal for column amplifier apply pulse pattern ? see sensor timing diagram 3 reset resets row indicated by left/right shift register high active (1= reset row) apply pulse pattern ? see sensor timing diagram 4 select selects row indicated by left/right shift register high active (1=select row) apply 5 v dc for normal operation 5 l/r use left or right shift register for select and reset 1 = left / 0 = right ? see sensor timing diagram 6 a0 start address for x- and y-pointers (lsb) 7 a1 start address for x- and y-pointers 8 a2 start address for x- and y-pointers 13 a3 start address for x- and y-pointers 14 a4 start address for x- and y-pointers 15 a5 start address for x- and y-pointers
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 28 of 35 16 a6 start address for x- and y-pointers 17 a7 start address for x- and y-pointers 18 a8 start address for x- and y-pointers (msb) 19 ld_y latch address (a0?a8) to y start register (0 = track, 1 = hold) 20 ld_x latch address (a0?a8) to x start register(0 = track, 1 = hold) 21 clk_yl clock yl shift regist er (shifts on falling edge) 22 sync_yl sets yl shift register to location preloaded in y start register low active (0=sync) apply sync_yl when clk_yl is high 24 clk_x clock x shift register (output valid & stable when clk_x is low) 25 sync_x sets x shift register to location preloaded in x start register. low active (0=sync) apply sync_x when clk_x is high after sync_x, apply falling edge on clk_x, and rising edge on clk_x. 27 clk_yr clock yr shift register (shifts on falling edge) 28 sync_yr sets yr shift register to location preloaded in y start register low active (0=sync) apply sync_yr when clk_yr is high 36 cal initialise output amplifier output amplifier will output blackref in unity gain mode when cal is high (1) apply pulse pattern (one pulse per frame) ? see sensor timing diagram 37 g0 select output amplifier gain value: g0 = lsb; g1 = msb 00 = unity gain; 01 = x2; 10= x4; 11=x8
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 29 of 35 38 g1 idem 71 clk_adc adc clock adc converts on falling edge 75 bitinver t 1 = invert output bits 0 = no inversion of output bits 80 tri_adc tri-state control of digital adc outputs 1 = tri-state; 0 = output table 13: digital output signals 23 eos_yl end-of-scan of yl shift register low first clock period after last row (low active) 26 eos_x end-of-scan of x shift register low first clock period after last active column (low active) 29 eos_yr end-of-scan of yr shift register low first clock period after last row (low active) 55 d0 adc output bit (lsb) 56 d1 adc output bit 57 d2 adc output bit 58 d3 adc output bit 59 d4 adc output bit 60 d5 adc output bit 61 d6 adc output bit 62 d7 adc output bit 63 d8 adc output bit 64 d9 adc output bit (msb) table 14: analog input signals 39 nbiasarr connect with 470 k ? to vdd and decouple to ground by 100 nf capacitor
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 30 of 35 40 pbias connect with 39 k ? to ground and decouple to vdd by 100 nf capacitor for 8 mhz pixel rate. (lower resistor values yield higher maximal pixel rates at the cost of extra power dissipation) 41 nbias_amp output amplifier speed/power control connect with 51k to vdd and decouple with 100 nf to gnd for 8 mhz output rate. (lower resistor values yield higher maximal pixel rates at the cost of extra power dissipation) 42 blackref control voltage for output signal offset level buffered on-chip, the reference level can be generated by a 100k resistive divider. connect to +/- 2 v dc for use with on-chip adc 44 in_adc input, connect to sensor?s output input range is between 2 & 4 v (vlow_adc & vhigh_adc) 45 nbiasana2 connect with 100 k ? to vdd and decouple to gnd 46 nbiasana connect with 100 k ? to vdd and decouple to gnd 47 70 vlow_adc vhigh_adc low reference and high reference voltages of adc should be about 2 and 4 v. the required voltage settings on vlow_adc and vhigh_adc can be approximated by tying vlow_adc with 1.2 k to gnd and vhigh_adc with 560 ohm to vdd 48 g_ab anti-blooming drain control voltage: default: connect to ground. the anti-blooming is operational but not maximal apply 1 v dc for improved anti-blooming 72 pbiasdig2 connect with 100k to gnd and decouple to vdd 73 pbiasenclo ad connect with 100k to gnd and decouple to vdd 74 pbiasdig1 connect with 47k to gnd and decouple to vdd table 15: analog output signals 43 out analogue output signal
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 31 of 35 to be connected to the analogue input of the adc table 16: test structures 81 testdio de plain photo diode, size: 14 x 25 pixels must be left open for normal operation 82 testpix array array of test pixels, connected in parallel (14 x 25 pixels) must be left open for normal operation 83 testpixe l_reset reset input of single test pixel must be tied to gnd for normal operation 84 testpixe l_out output of single test pixel must be left open for normal operation
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 32 of 35 6 mechanical data 6.1 package drawing figure 9: package dimensions table 17: package specifications type jlcc-84 material: black alumina ba-914 thermal expansion coefficient 7.6 x 10 -6 /k
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 33 of 35 6.2 die alignment pin 1 parallelism in x and y within 50 m glass window: 1.0 +/- 0.05 window adhesive: 0.08 0.02 die: 0.508 0.01 die adhesive 0.08 0.02 section a - a 68u a bonding cavity 0.508 0.051 die cavity: 0.508 0.051 drawing not to scale offset between center of silicium and center of cavity: x = 0 y = -68 m center of silicium center of cavity and of fpa figure 10: die alignment the die is aligned manually in the package to a tolerance of 50 m and the alignment is verified after hardening the die adhesive.
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 34 of 35 6.3 window specifications in the standard processing flow the following window is mounted: table 18: glass cover specification material: fused silica dimensions: 25 x 25 mm +- 0.2 mm thickness: 1 mm +- 0.05 mm 7 ordering information fillfactory part number cyp ress semiconductor part number STAR-250 cyis1sm0250aa-hfc ? (preliminary) STAR-250-nd cyis1sm0250aa-c ? (preliminary) disclaimer fillfactory image sensors are only warranted to meet the specifications as described in the production data sheet. fillfactory reserves the right to change any information contained herein without notice. please contact info@fillfactory.com for more information.
STAR-250 datasheet cypress semiconductor corporation 3901 north first street san jose, ca 95134 408-943-2600 contact: info@fillfactory.com document #:38-05713 rev.**( revision 5.2) page 35 of 35 document history page document title: STAR-250 250k pixel radiation hard cmos ima ge sensor document number: 38-05713 rev. ecn no. issue date orig. of change description of change ** 310213 see ecn sil initial cypress release

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